DIODES DMN3061SVT-13

DIODES · FETs & Power MOSFETs · MPN DMN3061SVT-13

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Specifications

Current - Continuous Drain(Id)3.4A
RDS(on)200mΩ@3.3V
Pd - Power Dissipation1.08W
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)29pF
Number2 N-Channel
Input Capacitance(Ciss)278pF
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)44pF

Technical details

3.4A 200mΩ@3.3V 1.08W 1.8V 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS

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