DIODES DMN3061S-13

DIODES · FETs & Power MOSFETs · MPN DMN3061S-13

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Specifications

Output Capacitance(Coss)45pF
Pd - Power Dissipation1.23W
Configuration-
Gate Charge(Qg)5.5nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)59mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)233pF

Technical details

1.23W 30V 2.9A 1.8V 59mΩ@10V 1 N-channel N-Channel SOT-23-3 Single FETs, MOSFETs RoHS

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