DIODES · FETs & Power MOSFETs · MPN DMN3060LWQ-13
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| Gate Charge(Qg) | 5.6nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 395pF |
30V 2.6A 1.8V 500mW 60mΩ@10V 1 N-channel SOT-323 Single FETs, MOSFETs RoHS