DIODES DMN3060LVT-7

DIODES · FETs & Power MOSFETs · MPN DMN3060LVT-7

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Specifications

Current - Continuous Drain(Id)3.6A
RDS(on)150mΩ@3.3V
Pd - Power Dissipation1.16W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)26pF
Number2 N-Channel
Input Capacitance(Ciss)395pF
Gate Charge(Qg)11.3nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)39pF

Technical details

3.6A 150mΩ@3.3V 1.16W 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS

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