DIODES · FETs & Power MOSFETs · MPN DMN3060LVT-13
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| Current - Continuous Drain(Id) | 3.6A |
|---|---|
| RDS(on) | 60mΩ@10V |
| Pd - Power Dissipation | 830mW |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Drain to Source Voltage | 30V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 395pF |
| Gate Charge(Qg) | 11.3nC@10V |
| Operating Temperature | -55℃~+150℃ |
3.6A 60mΩ@10V 830mW 1.8V 2 N-Channel TSOT-23-6 FET, MOSFET Arrays RoHS