DIODES DMN3033LSNQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3033LSNQ-7

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Specifications

Gate Charge(Qg)10.5nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)40mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)755pF
Type-

Technical details

N-Channel 30V 6A 1.4W Surface Mount SC-59

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