DIODES DMN3033LSNQ-13

DIODES · FETs & Power MOSFETs · MPN DMN3033LSNQ-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)10.5nC@5V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)108pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

30V 2.1V 1.4W 30mΩ@10V 1 N-channel SC-59-3 Single FETs, MOSFETs RoHS

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