DIODES DMN3032LFDBQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3032LFDBQ-7

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Specifications

Current - Continuous Drain(Id)6.2A
Pd - Power Dissipation1W
RDS(on)30mΩ@10V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)44pF
Number2 N-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)10.6nC
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 6.2A 1W Surface Mount UDFN2020-6

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