DIODES DMN3032LFDBQ-13

DIODES · FETs & Power MOSFETs · MPN DMN3032LFDBQ-13

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Specifications

Current - Continuous Drain(Id)6.2A
Pd - Power Dissipation1.7W
RDS(on)42mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)44pF
Number2 N-Channel
Input Capacitance(Ciss)500pF
Gate Charge(Qg)10.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)52pF

Technical details

6.2A 1.7W 42mΩ@4.5V 2V 2 N-Channel UDFN2020-6 FET, MOSFET Arrays RoHS

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