DIODES DMN3029LFG-7

DIODES · FETs & Power MOSFETs · MPN DMN3029LFG-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11.3nC@10V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.07W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)18.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

30V 8A 1.8V 2.07W 18.6mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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