DIODES DMN3029LFG-13

DIODES · FETs & Power MOSFETs · MPN DMN3029LFG-13

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Specifications

Gate Charge(Qg)11.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation2.07W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)26.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

N-Channel 30V 8A 2.07W Surface Mount PowerDI3333-8

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