DIODES DMN3026LVT-7

DIODES · FETs & Power MOSFETs · MPN DMN3026LVT-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)12.5nC@10V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)6.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)19mΩ@10V;22mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)643pF

Technical details

N-Channel 30V 6.6A 1.2W Surface Mount TSOT-23-6

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