DIODES DMN3022LDG-13

DIODES · FETs & Power MOSFETs · MPN DMN3022LDG-13

No reviews yet — be the first to review DIODES DMN3022LDG-13.

Specifications

Current - Continuous Drain(Id)7.6A;15A
RDS(on)22mΩ@5V;8mΩ@5V
Pd - Power Dissipation1.96W
Gate Threshold Voltage (Vgs(th))2.1V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)25pF
Number2 N-Channel
Input Capacitance(Ciss)996pF
Gate Charge(Qg)8nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)573pF

Technical details

1.96W 2.1V 2 N-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs