DIODES DMN3020UTS-13

DIODES · FETs & Power MOSFETs · MPN DMN3020UTS-13

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.304nF

Technical details

N-Channel 30V 15A 1.4W Surface Mount TSSOP-8

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