DIODES DMN3018SSS-13

DIODES · FETs & Power MOSFETs · MPN DMN3018SSS-13

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Specifications

Gate Charge(Qg)13.2nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)7.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)67pF
RDS(on)35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)697pF

Technical details

N-Channel 30V 7.3A 1.4W Surface Mount SO-8

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