DIODES DMN3018SFGQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3018SFGQ-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13.2nC@10V
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.1V
Pd - Power Dissipation1W
RDS(on)21mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)697pF

Technical details

30V 8.5A 2.1V 1W 21mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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