DIODES DMN3016lss-13

DIODES · FETs & Power MOSFETs · MPN DMN3016lss-13

No reviews yet — be the first to review DIODES DMN3016lss-13.

Specifications

Gate Charge(Qg)25.1nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)119pF
Current - Continuous Drain(Id)10.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.415nF
TypeN-Channel

Technical details

N-Channel 30V 10.3A 2W Surface Mount SO-8

Related FETs & Power MOSFETs