DIODES DMN3016LPS-13

DIODES · FETs & Power MOSFETs · MPN DMN3016LPS-13

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Specifications

Gate Charge(Qg)25.1nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)10.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.75W
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)15pF

Technical details

N-Channel 30V 10.8A 2.75W Surface Mount PowerDI-5060-8

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