DIODES DMN3016LK3-13

DIODES · FETs & Power MOSFETs · MPN DMN3016LK3-13

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Specifications

Gate Charge(Qg)25.1nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)37.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation2.8W
RDS(on)16mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.415nF

Technical details

N-Channel 30V 37.8A 2.8W Surface Mount TO-252

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