DIODES DMN3016LFDE-13

DIODES · FETs & Power MOSFETs · MPN DMN3016LFDE-13

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Specifications

Gate Charge(Qg)25.1nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation730mW
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)12mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)15pF

Technical details

N-Channel 30V 10A 0.73W Surface Mount UDFN2020-6

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