DIODES DMN3016LDN-7

DIODES · FETs & Power MOSFETs · MPN DMN3016LDN-7

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Specifications

Current - Continuous Drain(Id)7.3A
RDS(on)24mΩ@4.5V
Pd - Power Dissipation1.1W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)82pF
Number2 N-Channel
Input Capacitance(Ciss)1.415nF
Gate Charge(Qg)25.1nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)119pF

Technical details

N-Channel Array 30V 7.3A 1.1W Surface Mount DFN-8-EP(3x3)

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