DIODES DMN3013LDG-13

DIODES · FETs & Power MOSFETs · MPN DMN3013LDG-13

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Specifications

Current - Continuous Drain(Id)9.5A;15A
RDS(on)14.3mΩ@8V
Pd - Power Dissipation2.16W
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)600pF
Gate Charge(Qg)5.7nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

14.3mΩ@8V 2.16W 1.2V 2 N-Channel PowerDI3333-8 FET, MOSFET Arrays RoHS

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