DIODES DMN3010LFG-13

DIODES · FETs & Power MOSFETs · MPN DMN3010LFG-13

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)11A;30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation26W
Reverse Transfer Capacitance (Crss@Vds)276pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.075nF

Technical details

30V 2.5V 26W 8.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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