DIODES DMN3009SSS-13

DIODES · FETs & Power MOSFETs · MPN DMN3009SSS-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20nC@4.5V;42nC@10V
Current - Continuous Drain(Id)15A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)7.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

N-Channel 30V 15A 1.4W Surface Mount SO-8

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