DIODES DMN3009SK3-13

DIODES · FETs & Power MOSFETs · MPN DMN3009SK3-13

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Specifications

Gate Charge(Qg)42nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5.5V
Pd - Power Dissipation44W
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 30V 80A 44W Surface Mount TO-252(DPAK)

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