DIODES DMN3009SFGQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3009SFGQ-7

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Specifications

Output Capacitance(Coss)315pF
Pd - Power Dissipation900mW
Configuration-
Gate Charge(Qg)42nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
RDS(on)4mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)248pF
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

900mW 30V 45A 2.5V 4mΩ@10V 1 N-channel N-Channel PowerDI-3333-8 Single FETs, MOSFETs RoHS

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