DIODES · FETs & Power MOSFETs · MPN DMN3009SFGQ-13
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| Output Capacitance(Coss) | 315pF |
|---|---|
| Pd - Power Dissipation | 900mW |
| Configuration | - |
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 42nC@10V |
| Current - Continuous Drain(Id) | 16A;45A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Reverse Transfer Capacitance (Crss@Vds) | 248pF |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
900mW 30V 1.4V 5.5mΩ@10V 1 N-channel N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS