DIODES DMN3009LFVW-7

DIODES · FETs & Power MOSFETs · MPN DMN3009LFVW-7

No reviews yet — be the first to review DIODES DMN3009LFVW-7.

Specifications

Gate Charge(Qg)42nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

N-Channel 30V 60A 1W Surface Mount PowerDI3333-8

Related FETs & Power MOSFETs