DIODES DMN3009LFVQ-13

DIODES · FETs & Power MOSFETs · MPN DMN3009LFVQ-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)42nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

30V 60A 1W 5.5mΩ@10V 1 N-channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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