DIODES DMN3008SCP10-7

DIODES · FETs & Power MOSFETs · MPN DMN3008SCP10-7

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Specifications

Gate Charge(Qg)31.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)14.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation2.7W
Reverse Transfer Capacitance (Crss@Vds)97pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.476nF
TypeN-Channel

Technical details

30V 14.6A 2.3V 2.7W 11mΩ@10V 1 N-channel N-Channel X4-DSN3415-10 Single FETs, MOSFETs RoHS

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