DIODES · FETs & Power MOSFETs · MPN DMN29M9UFDF-13
No reviews yet — be the first to review DIODES DMN29M9UFDF-13.
| Gate Charge(Qg) | 14.6nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 72pF |
| RDS(on) | 13.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 655pF |
20V 11A 1.2V 1.2W 13.5mΩ@4.5V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS