DIODES DMN2991UTQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2991UTQ-7

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Specifications

Gate Charge(Qg)350pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation280mW
RDS(on)3Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)21.5pF

Technical details

20V 300mA 1V 280mW 3Ω@4.5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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