DIODES DMN2991UT-13

DIODES · FETs & Power MOSFETs · MPN DMN2991UT-13

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Specifications

Gate Charge(Qg)350pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation280mW
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)6Ω@1.8V
Number1 N-channel
Input Capacitance(Ciss)21.5pF

Technical details

N-Channel 20V 0.3A 0.28W Surface Mount SOT-523

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