DIODES DMN2990UFZ-7B

DIODES · FETs & Power MOSFETs · MPN DMN2990UFZ-7B

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)8pF
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)5.6pF
RDS(on)2.4Ω@1.5V
Number1 N-channel
Input Capacitance(Ciss)55.2pF
TypeN-Channel

Technical details

20V 250mA 1V 320mW 2.4Ω@1.5V 1 N-channel N-Channel X2-DFN0606-3 Single FETs, MOSFETs RoHS

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