DIODES · FETs & Power MOSFETs · MPN DMN2990UFO-7B
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| Gate Charge(Qg) | 410pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 750mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 840mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.6pF |
| RDS(on) | 1.2Ω@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 31pF |
20V 750mA 1V 840mW 1.2Ω@2.5V 1 N-channel X2-DFN0604-3 Single FETs, MOSFETs RoHS