DIODES DMN2990UDJQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2990UDJQ-7

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Specifications

Current - Continuous Drain(Id)450mA
Pd - Power Dissipation350mW
RDS(on)990mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)2.8pF
Number2 N-Channel
Input Capacitance(Ciss)27.6pF
Gate Charge(Qg)500pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

450mA 350mW 990mΩ@4.5V 1V 2 N-Channel SOT-963 FET, MOSFET Arrays RoHS

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