DIODES DMN2710UWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2710UWQ-7

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)600pC@4.5V
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation470mW
RDS(on)450mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number1 N-channel
Input Capacitance(Ciss)42pF

Technical details

N-Channel 20V 0.9A 0.47W Surface Mount SOT-323

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