DIODES DMN2710UW-7

DIODES · FETs & Power MOSFETs · MPN DMN2710UW-7

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Specifications

Gate Charge(Qg)600pC
Drain to Source Voltage20V
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation470mW
RDS(on)450mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number1 N-channel
Input Capacitance(Ciss)42pF

Technical details

20V 900mA 1V 470mW 450mΩ@4.5V 1 N-channel SOT-323 Single FETs, MOSFETs RoHS

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