DIODES · FETs & Power MOSFETs · MPN DMN2710UTQ-13
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 600pC@4.5V |
| Current - Continuous Drain(Id) | 870mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 320mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 450mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 42pF |
20V 870mA 1V 320mW 450mΩ@4.5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS