DIODES DMN2710UT-13

DIODES · FETs & Power MOSFETs · MPN DMN2710UT-13

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Specifications

Gate Charge(Qg)600pC
Drain to Source Voltage20V
Current - Continuous Drain(Id)870mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation320mW
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)600mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)42pF

Technical details

N-Channel 20V 0.87A 0.32W Surface Mount SOT-523

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