DIODES DMN2710UFB-7B

DIODES · FETs & Power MOSFETs · MPN DMN2710UFB-7B

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Specifications

Gate Charge(Qg)600pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.3W
RDS(on)600mΩ@2.5V

Technical details

20V 1.3A 1V 1.3W 600mΩ@2.5V X1-DFN1006-3 Single FETs, MOSFETs RoHS

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