DIODES DMN2710UDW-13

DIODES · FETs & Power MOSFETs · MPN DMN2710UDW-13

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Specifications

Current - Continuous Drain(Id)800mA
RDS(on)600mΩ@2.5V
Pd - Power Dissipation490mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)6.5pF
Number2 N-Channel
Input Capacitance(Ciss)42pF
Gate Charge(Qg)600pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF

Technical details

800mA 600mΩ@2.5V 490mW 1V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS

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