DIODES DMN2600UFB-7

DIODES · FETs & Power MOSFETs · MPN DMN2600UFB-7

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Specifications

Gate Charge(Qg)850pC@4.5V
Drain to Source Voltage25V
Output Capacitance(Coss)7.56pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation540mW
Reverse Transfer Capacitance (Crss@Vds)5.59pF
RDS(on)600mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)70.13pF
TypeN-Channel

Technical details

N-Channel 25V 1.3A 0.54W Surface Mount X1-DFN1006-3

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