DIODES DMN24H11DSQ-13

DIODES · FETs & Power MOSFETs · MPN DMN24H11DSQ-13

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Specifications

Gate Charge(Qg)3.7nC@10V
Drain to Source Voltage240V
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation750mW
Reverse Transfer Capacitance (Crss@Vds)4.1pF
RDS(on)12Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)76.8pF

Technical details

240V 270mA 750mW 12Ω@4.5V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS

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