DIODES DMN24H11DS-7

DIODES · FETs & Power MOSFETs · MPN DMN24H11DS-7

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Specifications

Gate Charge(Qg)3.7nC@10V
Drain to Source Voltage240V
Current - Continuous Drain(Id)270mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)4.1pF
RDS(on)11Ω@10V
Number1 N-channel
Input Capacitance(Ciss)76.8pF

Technical details

N-Channel 240V 0.27A 1.2W Surface Mount SOT-23

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