DIODES · FETs & Power MOSFETs · MPN DMN2451UFB4-7B
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| Gate Charge(Qg) | 6.4nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 660mW |
| RDS(on) | 400mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 32pF |
20V 1.3A 1V 660mW 400mΩ@4.5V 1 N-channel X2-DFN1006-3 Single FETs, MOSFETs RoHS