DIODES DMN2450UFB4Q-7B

DIODES · FETs & Power MOSFETs · MPN DMN2450UFB4Q-7B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.3nC@10V
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation500mW
RDS(on)400mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)56pF

Technical details

20V 1A 900mV 500mW 400mΩ@4.5V 1 N-channel X2-DFN1006-3 Single FETs, MOSFETs RoHS

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