DIODES DMN2400UFB4-7

DIODES · FETs & Power MOSFETs · MPN DMN2400UFB4-7

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Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation0.47mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)750mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)36pF
TypeN-Channel

Technical details

N-Channel 20V 0.75A 0.47mW Surface Mount DFN1006-3

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