DIODES DMN2400UFB-7

DIODES · FETs & Power MOSFETs · MPN DMN2400UFB-7

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Specifications

Gate Charge(Qg)500pC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)750mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation0.47mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)550mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)36pF

Technical details

20V 750mA 900mV 0.47mW 550mΩ@4.5V 1 N-channel X1-DFN1006-3 Single FETs, MOSFETs RoHS

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