DIODES DMN2310UWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN2310UWQ-7

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Specifications

Gate Charge(Qg)700pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation480mW
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)150mΩ@4.5V;190mΩ@2.5V;245mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)38pF

Technical details

N-Channel 20V 1.3A 480mW Surface Mount SOT-323

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